Journal: Active and Passive Electronic Components
Title: Comparative Simulation Analysis of Process Parameter Variations in 20nm Triangular FinFET.
Abstract: Technology scaling below 22nm has brought several detrimental effects such as increased short channel effects (SCEs) and leakage currents. In deep submicron technology further scaling in gate length and oxide... more
Journal: Springer Sadhna
Title: Modelling and mitigation of single-event upset in CMOS voltage controlled oscillator.
Abstract: Single-event effects (SEEs) have been the primary concern in study of radiation effects since late 1970s with the discovery of soft errors in terrestrial and space environments. The interaction of a single ionized particle... more
IEEE International Symposium on Smart Electronic Systems (iSES 2019)
Title: Design and ASIC Implementation of a Reconfigurable Fault-Tolerant ALU for Space Applications.
Abstract: Electronic devices operating in space suffer from damage due to cosmic rays, hence for such applications, radiation effects are the primary concern. With technology scaling, semiconductor devices are achieving high performance, low power, and less area, but it increases the radiation degradation and makes the integrated circuit... more
