Dr. Pramod Kumar Tiwari

Reasearch Interests

Semiconductor device modeling, Simulations,Nanoscale Devices, MG MOSFETs, JLFETs, TFETs, Optoelectronic Applications, THz Devices, Nanotechnology

Qualifications

Ph.D. (2012) in Electronics Engineering (Microelectronics) at Indian Institute of Technology (BHU) Varanasi, UP, India

M.Tech (2007) in Electronics Engineering (Electronic Circuits and System Design) at Aligarh Muslim University, UP, India

B. E (2002) in Electronics & Telecommunication Engineering at CCS University Meerut, UP, India

Teaching/Research Experience

18/01/2016 - till date Assistant Professor in department of EE, IIT Patna , Bihar

26/07/2011 - 15/1/2016 Assistant Professor in department of ECE, NIT Rourkela, Odisha.

2008-2011 Senior Research Fellow, at CRME, IIT BHU, Varanasi.

Courses Taught

Undergraduate

  1. Basic Electronics
  2. Semiconductor Devices
  3. Analog Communication
  4. Analog Integrated Circuits
  5. Fundamentals of Communication
  6. Electrical Sceinces
  7. Basic Electronics Laboratory
  8. Analog Electronics Laboratory

Postgraduate

  1. VLSI Technology
  2. MOS Modeling & Simulations
  3. Device Simulation Laboratory

Invited Talks/Guest Lectures

  1. Modern communication from analog to 4G and beyond, NIT Rourkela, 2012
  2. VLSI design and CAD tools, NIT Rourkela, 2013
  3. Invited Talk at GBPEC, Pauri Garhwal Uttarakhad, April 2-3,2017,2017
  4. AICTE Sponsored Short Term Course on Modeling and Simulation of Advanced Semiconductor Devices, IIT (BHU) July 17-22, 2017
  5. Recent Trends in Electronic Devices and Signal processing” October 10th & 11th, 2017 GBPEC, Pauri Garhwal Uttarakhad, 2017
  6. Faculty Development Program on "Emerging Issues in VLSI Design" from 07/05/2018 to 11/05/2018, at DoECE, SMVD University Katra
  7. A short term course on "Modeling and Simulation of Advanced Semiconductor Devices & VLSI Circuits" from 07/05/2018 to 11/05/2018, at GBPEC, Pauri Garhwal Uttarakhad, 2017

Short-term courses organized

  1. MOSFET Modeling and Simulations from July 7, 2018 to July 9, 2018

Adminstration

  1. PIC, Incubation Center, IIT Patna from 1/12/2017
  2. PIC, Communication till 1/12/2017
  3. Member of Institute Registration Committee till 1/12/2017
  4. Departmental Representative to Computer Centre
  5. Faculty Advisor of B.Tech 2016 Batch
  6. PIC, Research Scholar Day 2017
  7. Member of Department Purchase Committee
  8. Secretary, DAPC, Electrical Engineering till Jan, 2018
  9. Attended Board of Studies meeting of GB Pant Engg College, Pauri Garhwal, an autonomous institute of Uttarakhand Gov
  10. IIT Patna representative of syllabus review committee of Aryabhata Knowledge University, Patna, Bihar
  11. Assistant warden, Homi Bhabha Hall, NIT Rourkela from 2013-2015
  12. Member, APOC, NIT Rourkela, 2015
  13. NBA Acredation responsibility, VLSI & ES, NIT Rourkela
  14. Faculty Advisor, B.Tech 2012 Batch, ECE, NIT Rourkela
  15. PIC, Direct Purchase, ECE, NIT Rourkela 2015-2016

Honours & Awards

  1. Young Scientist Research Grant
  2. IEEE EDL, Golden list of Reviwer
  3. Senior Member IEEE and IEEE EDS
  4. Life Member Indian Society of Technical Education (ISTE)
  5. UGC Senior Research Fellow
  6. Awarded Travel Grant from Department of Science and Technology
  7. Served as a reviewer for: IEEE EDL, TED, T Nano, IET-CDS, IEEE Sensor J, Super lattices and Microstructure journal, Microelectronics reliability,SSE,JAP, CAP,JCEL, IET Journals,JEM etc

Projects

S.noFunding agency TitleCostStatus Remarks
1 DST Modeling, simulation and performance optimization of Re-S/D SOI MOSFET 22.90 lakhs

Completed

(2013-2016)

Excellent

2 DRDO Analytical investigation of subthreshold behavior of SiNT FETs 19.98 lakhs

Ongoing

(2016-2019)

..

Ph.D students

S.no Student Name Title Status Current Affiliation
1 Gopi Krishna Saramekala Modeling, simulation and performance optimization of recessed- source/drain Re-S/D SOI MOSFETs

Completed

(2012-2017)

Assistant Prof., NIT Calicut

2 Visweswara Rao Samoju Modeling and simulation of Dual-metal Quadruple Gate MOSFETs

Ongoing

(Since Dec,2013)

...

3 Arun Kumar Compact Modeling of Silicon Nano Tube FETs

Ongoing

(Since July,2016)

...

4 Deepti Gola Analatical analysis of Tri-gate JLFETs

Ongoing

(Since Dec,2016)

....

5 Shiv Bhusan Modeling and simulation of SiNT FETs

Ongoing

(Since Jan,2017)

....

5 P SURYA TEJA NAGA SRINIVAS Semiconductor Devices

Ongoing

(Since Jan,2018)

....

M.Tech students

S.no Student Name Year of CompletionTitle Status
1 Abirmoya Santra 2013 Subthreshold modeling of TM DG MOSFETs

Circuit design engineer at Sankalp Semiconductor

partime Ph.D at IIT Madras
2 Shiv Bhushan 2013 Threshold voltage modeling of strained MOSFETs Enrolled for Ph.D program at IIT Patna
3 Santunu Sarangi 2013 Simulation based study of gate misalignment effects in gate engineered DG MOSFETs Enrolled for Ph.D program at IIT kharagpur
4 Shara Mathew 2014 Atlas based simulation study of junction less double gate (DG) tunnel FET Enrolled for Ph.D program at NIT Surathkal
5 Shilpika Mehandi 2014 Performance analysis of dual material gate (dmg) silicon on insulator (soi) tunnel fets Enrolled for Ph.D program at North Eastern Hill University,Shillong
6 Gokula Raju 2014 ATLAS simulation based characterization of Recessed-S/D FD SOI MOSFETs with non-uniform lateral doping
7 Ajit Kumar 2014 Modeling and simulation of subthreshold characteristics of fully-depleted recessed-source/drain UTB SOI MOSFETs including substrate induced surface potential effects Enrolled for Ph.D program at IIT kharagpur
8 Anand Mukhopadhaya 2014 Two-dimensional(2D) subthreshold current and subthreshold swing modeling of double-material-gate(DMG) strained-Si(s-Si) on silicon-germanium(SiGe) MOSFETs. Enrolled for Ph.D program at IIT kharagpur
9 Santosh Kumar Padhy 2015 Atlas simulation of MSM photo detector
10 Mukesh Kumar 2015 A simulation based RF performance study of a Silicon nanotube FET analysis System Engineer at IBM India Pvt Ltd
11 Mukesh Kushwaha 2015 Threshold Voltage Modeling of Recessed- Source/drain Soi Mosfets with Vertical Gaussian Doping Profile
12 Srikanya Dasari 2015 Virtual fabrication of short-channel Recessed-Source/Drain (Re-S/D) SOI MOSFETs Assistant professor at Vignan's Institute of Information Technology (VIIT)
13 Petla Ravi Chandra 2016 Analyzing the electrical characteristics of Junction less optically gated tunnel FET
14 Dipankar Talukdar 2016 Modeling and simulation of gate tunneling current of Re-S/D SOI MOSFET Design Engineer at Si2chip
15 Sradhanjali Mohapatra 2016 Investigation of subthreshold characteristics of vertically doped Gaussian profile Re-S/D SOI MOSFET Scientist-C at ISRO Satellite Centre (ISAC)
16 Kiranmayi Prasada 2016 Modeling and simulation of Re-S/D SOI MOSFET using evanescent method Research staff at BEL

Research Publications

Book Chapter

  1. Pramod Kumar Tiwari, Sarvesh Dubey and S. Jit, Double-Gate (DG) MOSFETs: A Review Advances in Microelectronics and Photonics, Nova Science Publishers, USA, 2012(ISBN: 978-1-61470-956-5).

International Journals

  1. Arun Kumar, and Pramod Kumar Tiwari, Drain current modeling of double gate-all-around (DGAA) MOSFETs, IET-CDS (Accepted) , 2018 (IF=1.38)
  2. Arun Kumar, and Pramod Kumar Tiwari, An Explicit Unified Drain Current Model for Silicon-Nanotube-Based Ultra-thin Double Gate-All-Around (DGAA) MOSFETs, IEEE Transactions on Nanotechnology (Accepted), 2018.(IF=2.8)
  3. Deepti Gola, Balraj Singh and Pramod Kumar Tiwari, Subthreshold Modeling of Tri-Gate Junctionless Transistors With Variable Channel Edges and Substrate Bias Effects, IEEE Transactions on Electron Devices, Vol. 65, no.5, pp.1663 - 1671, MAY 2018. (IF=2.605, h5 index 152)
  4. Visweswara Rao Samoju, Kamalakanta Mahapatra, Pramod Kumar Tiwari, Analytical modeling of subthreshold characteristics by considering quantum confinement effects in ultrathin dual-metal quadruple gate (DMQG) MOSFETs, Superlattices and Microstructures, Vol. 111, pp. 704-713, 2017. (IF=2.123, h5 index 57)
  5. Shaivalini Singh, Pramod Kumar Tiwari, Hemant Kumar, Yogesh Kumar, Gopal Rawat, Sanjay Kumar, Kunal Singh, Ekta Goel, S. Jit, and Si-Hyun Park, Theoretical and experimental study of UV detection characteristics of Pd/ZnO nanorod Schottky diodes, NANO: Brief reports and reviews, Volume 12, issue 11, (2017) 1750137 8 pages.
  6. Balraj Singh, Trailokya Nath Rai, Deepti Gola, Kunal Singh, Ekta Goel, Sanjay Kumar, Pramod Kumar Tiwari, Satyabrata Jit, Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure, Materials Science in Semiconductor Processing, Volume 71, issue 11, Pages 161–165, 2017 (IF=2.359, h5 index 31)
  7. Deepti Gola, Balraj Singh and Pramod Kumar Tiwari, A Threshold Voltage Model of Tri-Gate Junctionless Field-Effect Transistors Including Substrate Bias Effects, IEEE Transactions on Electron Devices, Volume: 64, Issue:9,pp. 3534 – 3540, 2017. (IF=2.605, h5 index 80)
  8. Arun Kumar, Shiv Bhushan, and Pramod Kumar Tiwari, Threshold voltage modeling of ultra-short Double-gate–all-arround MOSFETs considering quantum confinement effects, IEEE Transaction on NanoTechnology, Volume: 16, Issue: 5, pp. 868 – 875, 2017. (IF=2.485, h5 index 34)
  9. A. Kumar., Shiv Bhushan, Pramod Kumar Tiwari, Analytical modeling of subthreshold characteristics of ultra-thin double gateall-around (DGAA) MOSFETs incorporating quantum confinement effects, Superlattices and Microstructures Vol. 109, pp. 567-578, 2017. (IF=2.123, h5 index 57)
  10. Gopi krishna Saramekala, Pramod Kumar Tiwari, Analytical subthreshold current and subthreshold swing models for a fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFET with back-gate control" IEEE/TMS Journal of Electronic Materials, Vol.46, No. 8, pp-5046-5056, 2017 (SCI, Impact factor: 1.579) h5 index: 34
  11. Visweswara Rao Samoju, Sradhanjali Mohapatra, Shiv Bhushan, and Pramod Kumar Tiwari, Analytical Modeling and Simulation of Subthreshold Characteristics of RecessedSource/Drain (Re-S/D) Silicon-on-Insulator MOSFETs with Gaussian Doping Profile, Journal of Nanoelectronics and Optoelectronics Vol. 12, No 5., pp. 490-498, 2017. (SCI, Impact factor: 0.591) h5 index: 17
  12. Gopi krishna Saramekala, Pramod Kumar Tiwari,“An Analytical threshold voltage model for a fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFET with back-gate control”, IEEE/TMS Journal of Electronic Materials, vol.45, pp. 5367, 2016. (SCI, Impact factor: 1.491) h5 index: 32
  13. Pramod Kumar Tiwari, Visweswara Rao Samoju, Thandva Sunkara, Sarvesh Dubey, Satyabrata Jit, “Analytical Modeling of Threshold Voltage for Symmetrical Silicon Nano-Tube Field-Effect-Transistors (Si-NT FETs)”, Journal of Computaional Electronics, Vol. 15, no. 2, pp 516-524, 2016. (SCI, Impact factor: 1.104)
  14. Pramod Kumar Tiwari, Mukesh Kumar, R Shakru Naik, Gopi krishna Saramekala, “Analog and RF performance study of SiNT MOSFETs”, Journal of Semiconductors, Vol. 37, pp. 064003(1-4), 2016.
  15. Pramod Kumar Tiwari, Visweswara Rao Samoju, Tuhinanshu Gaurav, “A doping dependent subthreshold swing modeling of QG MOSFETs”, Journal of Nanoengineering and Nanomanufacturing, Vol. 5, pp. 1-6, 2015. (doi:10.1166/jnan.2015.1244)
  16. Gopi krishna Saramekala, Pramod Kumar Tiwari, “A ballistic subthreshold current model for ultra-short channel recessed-source/ drain (Re-S/D) SOI MOSFETs”, Journal of Nanoengineering and Nanomanufacturing, Vol. 5, pp. 1-5, 2015. (doi:10.1166/jnan.2015.1239)
  17. Visweswara Rao Samoju, Pramod Kumar Tiwari, “Threshold voltage modeling for dual-metal quadruple-gate (DMQG) MOSFETs”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2015 (doi: 10.1002/jnm.2126). ( SCI, Impact factor: 0.515)
  18. Gopi krishna Saramekala, Sarvesh Dubey, Pramod Kumar Tiwari, “An Analytical threshold voltage model for recessed source drain SOI MOSFETs with high-k dielectric”, Chinese Physics B, vol. 24, pp. 10505, 2015 (SCI, Impact factor: 1.603)
  19. Visweswara Rao Samoju, Sarvesh Dubey, Pramod Kumar Tiwari, “Quasi-3D subthreshold current and subthreshold swing Models of Dual-Metal Quadruple-Gate (DMQG) MOSFETs” Journal of Computaional Electronics, vol: 14 pp :582–592, 2015 (SCI, Impact factor :1.104)
  20. Visweswara Rao Samoju, Satyabrata Jit, Pramod Kumar Tiwari, “A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate (DMQG) MOSFETs”, Chinese Physics letter, Vol. 31 (12), pp. 128502,2014. (SCI, Impact factor :0.927)
  21. Gopi krishna Saramekala, Sarvesh Dubey, Pramod Kumar Tiwari, “ Numerical simulation based study of analog and RF performance of a Re-S/D SOI MOSFETs” Supperlattices and Microstructures Journal, Volume 76, , Pages 77–89, December 2014. (SCI, Impact factor :2.117)
  22. Pramod Kumar Tiwari, Gopi Krishna Saramekala, Annad Mukhopadhaya, Sarvesh Dubey, Analytical subthreshold current and subthreshold swing models for DMG strained-Si MOSFETs Journal of Semiconductors, vol. 35, no 10, pp. 104002(7), 2014.
  23. Gopi Krishna S., Abirmoya Santra, Pramod Kumar Tiwari, “Analytical subthreshold current and subthreshold swing models for a short-channel dual-metal-gate (DMG) fully depleted recessed-source/drain (Re-S/D) SOI MOSFET’, Journal of Computaional Electronics, vol 13, pp.467-476, 2014. (SCI , Impact factor :1.104)
  24. Ajit Kumar, Pramod Kumar Tiwari, “A threshold voltage modeling of Re-S/D SOI MOSFETs including SISP effects”, Solid State Electronics, vol 95, issue 5, pp.52-60, 2014. (SCI , Impact factor :1.345)
  25. Abirmoya Santra, Mirgender Kumar, Sarvesh Dubey, Satyabrata Jit, Pramod Kumar Tiwari, “Analytical modeling of threshold voltage of stacked Triple-Material-Gate (TMG) Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs”, Journal of Active and Passive Electron Devices, Vol. 9, pp. 235-257, 2014.
  26. Sarvesh Dubey, Abirmoya Santra, Gopi Krishna S., Mirgender Kumar, Pramod Kumar Tiwari, An analytical threshold voltage model for triple-material gate-all-around (TM-GAA) MOSFETs, IEEE Transactions on Nanotechnology, vol 12, no5, pp: 766-773,2013. (SCI , Impact factor :2.47)
  27. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit, “Analytical Modeling and Simulation of Subthreshold Characteristics of Back-Gated SSGOI and SSOI MOSFETs: A Comparative Study”, Current Applied Physics, vol.13, pp.1778-1786, 2013. (SCI , Impact factor :2.144)
  28. Gopi Krishna S., Abirmoya Santra, Sarvesh Dubey, Satyabrata Jit, Pramod Kumar Tiwari, “An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed- source/drain (Re-S/D) SOI MOSFET”, Supperlattices and Microstructures Journal, vol-60,issue-8, pp:580-595,2013. (SCI , Impact factor :1.979)
  29. Santunu Sarangi, Shiv Bhushan, Abirmoya Santra, Sarvesh Dubey, Satyabrata Jit and Pramod Kumar Tiwari, A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs, Supperlattices and Microstructures Journal, vol-60, issue8,263-279,2013. (SCI , Impact factor :2.117)
  30. Shiv Bhushan, Santunu Sarangi, Gopi Krishna S., Abirmoya Santra , Sarvesh Dubey, Pramod Kumar Tiwari, “An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Si (s-Si) Channel on Silicon-Germanium (SiGe) Substrates”, IEEK-Journal of Semiconductor Technology Sciences, vol 13, no 4, pp367-380, 2013. (SCI , Impact factor :0.62)
  31. Mrigendra Kumar, Sarvesh Dubey , Pramod Kumar Tiwari , S. Jit , “Two-Dimensional Modeling of Subthreshold Current and Subthreshold Swing of Double-Material-Gate (DMG) Strained-Si (s-Si) on SGOI MOSFETs”, Journal of Computaional Electronics, vol-12, issue 2, pp;275-280, 2013. (SCI , Impact factor :1.104)
  32. Sarvesh Dubey , Mrigendra Kumar, Pramod Kumar Tiwari, S. Jit, “Analytical threshold voltage model for short-channel Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs with localized charges”, Journal of Computational and Theoretical Nano. Sciences, vol 11, issue 1, pp:1-8, 2014. (SCI , Impact factor :1.104)
  33. Mrigendra Kumar, Sarvesh Dubey, Pramod Kumar Tiwari , S. Jit, “Analytical subthreshold current and subthreshold swing model for Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs”, Supperlattice and Microstructure Journal, Vol 58, issue 4, pp.1-10, 2013. (SCI , Impact factor :2.117)
  34. Mrigendra Kumar, Sarvesh Dubey ,Pramod Kumar Tiwari, “S. Jit, An analytical model of threshold voltage for short-channel double-material gate strained-Si on Silicon Germenioum on isulator MOSFET”, Journal of Computaional Electronics, vol 12, issue 1, pp 20-28, 2013. (SCI , Impact factor :1.104)
  35. Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit, “On current modeling of Gaussian doped DG MOSFET”, Journal of Semiconductors, vol. 34, no.5, pp 054001(8), 2013.
  36. Shiv Bhushan, Santunu Sarangi, Abirmoya Santra, Mirgender Kumar, Sarvesh Dubey, S. Jit, Pramod Kumar Tiwari, “An analytical surface potential model for s-Si on SiGe MOSFET including the effects of interface charges”, Journal of Electron Devices, vol.15, pp. 1285-1290, 2012. (SCI, Impact factor :0.48)
  37. Pramod Kumar Tiwari, Sarvesh Dubey and S. Jit, “Analytical modeling for the subthreshold current and subthreshold swing of the triple-material double-gate(TM-DG) MOSFETs”, Supperlattice and Microstructure Journal, vol. 51(5), pp. 715-724, 2012. (SCI , Impact factor :1.979)
  38. Pramod Kumar Tiwari and S.Jit, “A 2D Model for Potential Distribution and Threshold Voltage of Double-Gate (DG) MOSFETs with Vertical Gaussian Doping Profile”, Journal of Nan electron. Optoelectron., vol. 6(2), pp. 207-213(7), 2011. (SCI)
  39. Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “A short-channel subthreshold current and subthreshold swing model for Double-Gate (DG) MOSFETs with a vertical Gaussian-Like Doping Profile”, Journal of Applied Physics, 109, 054508(7), 2011. (SCI , Impact factor :2.185)
  40. Pramod Kumar Tiwari, Sarvesh Dubey and S.Jit, “Doping dependent threshold voltage model for short-channel double-gate(DG) MOSFETs”, J. Nano- Electron. Phys. 3 No1, 963, 2011. (SCI , Impact factor :0.256)
  41. Sarvesh Dubey, Dhiraj Gupta,Pramod Kumar Tiwari, and S. Jit, “2D analytical modeling of threshold voltage of doped short-channel triple-material double-gate (TM-DG) MOSFETs”, J. Nano- Electron. Phys. 3 No1, 576, 2011. (SCI , Impact factor :0.256)
  42. Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile”, J. Nanoelectron. Optoelectron. 5, 332-339, 2010. (SCI)
  43. Pramod Kumar Tiwari and S. Jit, “Subthreshold current model for short-channel double-gate (DG) MOSFETs with vertical Gaussian doping profile” Journal of Computational and Theoretical Nano. Sciences , vol. 8(7), pp. 1296-1303, 2011. (SCI , Impact factor :1.03)
  44. Pramod Kumar Tiwari, S. Dubey, M. Singh and S. Jit, “A two-dimensional analytical model for threshold voltage of short-channel triple-material double gate (TM-DG) MOSFETs”, Journal of Applied Physics , 108, pp.074508, 2010. (SCI , Impact factor: 2.185)
  45. Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “A 2D Model for the Potential Distribution and Threshold Voltage of Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile”, Journal of Applied Physics, 108, (3), pp.034518 (7), 2010. (SCI , Impact factor :2.185)
  46. Pramod Kumar Tiwari, C. R. Panda, P. Sharma, A. Agrawal and S.Jit, “Doping Dependent subthreshold swing model for DG MOSFETs”, IET-Circuits Devices and Systems (Previously IEE-CDS), Vol.4, No.4, pp.337-345, 2010. (SCI , Impact factor :0.91)
  47. Pramod Kumar Tiwari and S.Jit, “A Doping-Dependent Short-Channel Subthreshold Current model for Symmetric Double-Gate (DG) MOSFETs” Journal of Nanoelectronics and Optoelectronics (JNO)., Vol. 5, No.1, pp. 82-88, 2010. (SCI)
  48. Pramod Kumar Tiwari and S.Jit, “A 2D Model for Potential Distribution and Threshold Voltage of Symmetric Double-Gate (DG) MOSFETs With Vertical Gaussian Doping Profile”, Journal of Electron Devices (France) ,vol.7, pp.241-249, 2010. (SCI , Impact factor :0.48)
  49. Pramod Kumar Tiwari and S.Jit, “A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping”, IEEK-Journal of Semiconductor Technology Sciences, Vol.10, N0.2, pp.107- 117, 2010. (SCI , Impact factor :0.62)
  50. S. Jit, P. K. Pandey, and Pramod Kumar Tiwari, “Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si-SOI-MESFETs”, Solid-State Electronics., vol. 53, pp. 57-62, 2009. (SCI , Impact factor :1.514)

Articles Published in International Conferences

  1. Pramod Kumar Tiwari, Arun Kumar and Dipankar Talukdar, An analytical gate tunneling current model of Re- S/D SOI MOSFETs, IEEE UPCON-2016, IIT BHU.
  2. Mukesh Kushwaha, Gopi Krishna Saramekala and Pramod Kumar Tiwari “Threshold Voltage Modeling of Recessed- Source/drain Soi Mosfets with Vertical Gaussian Doping Profile” International conference on materials for advance material research society of Singapore, suntech city, 2015.
  3. Srikanya Dasari, Gopi krishna Saramekala and Pramod Kumar Tiwari “virtual fabrication of short channel Recessed-Source Drain (Re-S/D) SOI MOSFETs” Third international symposium on semiconductor materials and devices, Anna university, Tamilnadu, 2015
  4. Sarvesh Dubey, Anand Mukhopadhyay, Mirgender Kumar and Pramod Kumar Tiwari, “Effect of Temperature Variation on the Characteristics of Dual-Metal Gate Strained Silicon on Si1-XGeX Substrate MOSFET”, Third international symposium on semiconductor materials and devices, Anna university, Tamilnadu, 2015
  5. Gopi Krishna Saramekala,Pramod Kumar Tiwari, “Analytical subthreshold current modeling of Re-S/D SOI MOSFETs with high K dielectric”, IEEE Asia Modeling Symposium 2014, Taiepi, Taiwan, ISBN 978-1-4799-6487-1, pp.258-264
  6. Shara Mathew, Silpeeka Medhi, and Pramod Kumar Tiwari,, “A Performance Analysis of Hetero- Dielectric Dual-Material-Gate Silicon-on-Insulator Tunnel-Field-Effect Transistors (HD-DMG SOI TFETs)”, IEEE India conference INDICON 2014, 11-13 Dec, Yashada, Pune, India
  7. Gopi Krishna S., Abirmoya Santra, Pramod Kumar Tiwari, “An analytical surface potential modeling of dual-metal-gate (DMG) recessed- source/drain (Re-S/D) SOI MOSFET, International Conf. on Advanced Trends in Engineering and Technology”, Dec 19-20, 2013, Jaipur, India, pp.160 to 163
  8. Gopi Krishna Saramekala, Satyabrata Jit, and Pramod Kumar Tiwari, “ATLAS based simulation study of the electrical characteristics of dual-metal-gate (dmg) fully-depleted (fd) recessed-source/drain (RE-S/D) SOI MOSFETS”, IEEE Conference ICAEE-2014, VIT University Vellore, Jan 9-11, 2014.
  9. Santunu Sarangi, Gopi Krishna .S, Abirmoya Santra, Shiv Bhushan, and Pramod Kumar Tiwari, An Analytical Surface Potential Model of a Gate Misaligned Triple-Material Double-Gate (TM DG) MOSFET, ICQNM-2013, Barcelona, Spain
  10. Santunu Sarangi, Gopi Krishna .S, Abirmoya Santra, Shiv Bhushan, and Pramod Kumar Tiwari, “A Simulation-based Study of Gate Misalignment Effects in Triple-Material Double-Gate (TM DG) MOSFETs" IEEE conference proceedings, IMAC4S, Palai, Kerala Mar 2013, pp.41
  11. S. Sarangi, A. Santra, S. Bhushan, Gopi Krishna S., and Pramod Kumar Tiwari, “An Analytical Surface Potential Modeling of Fully-Depleted Symmetrical Double-Gate (DG) Strained-Si MOSFETs Including the Effect of Interface Charges", IEEE conference proceedings, SCES, Allahabad, Mar 2013 pp.1-5.
  12. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit, A Comparative Study of Short-Channel-Effects of strained-Si on Insulator (SSOI) and strained-Si on Silicon-Germanium-on-Insulator (SSGOI) MOSFETs, in International Conference on Electrical and Electronics Engineering (ICEEE-2013), accepted for @WCE conference proceeding, London, July 04-06, 2013.
  13. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, and S. Jit, “Back Gated (BG) Strained-Si-on-Silicon-Germanium-on-Insulator (SSGOI) MOSFETs for Improved Switching Speed and Short-Channel-Effects (SCEs)”, in international conference on Recent Trends in Applied Physics and Material Science, accepted for @AIP conference proceeding, Bikaner, Feb 01-03, 2013.
  14. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, and S. Jit, “Quantitative Performance Investigations of Back Gated Strained-Si-on-Insulator (SSOI) MOSFETs: Towards Double-Gate (DG) Operation”, in international conference on Nanoelectronics and Nano devices (ICNEND), accepted for @SNEM conference proceeding, Chennai, Jan. 21-22, 2013.
  15. Santunu Sarangi, Gopi Krishna .S, Abirmoya Santra and Pramod Kumar Tiwari, A Simulation-based Study of Gate Misalignment Effects in Triple-Material Double-Gate (TM DG) MOSFETs, Accepted for oral presentation in International Multi Conference on Automation, Computing, Control, Communication and Compressed Sensing, Kerala, March 22-23, 2013.
  16. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S.Jit, A 2D Analytical Modeling Approach for Nanoscale Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs by Evanescent Mode Analysis, accepted for poster presentation in CODIS-2012, Jadvpur University, Kolkata.
  17. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, An Analytical Modeling of Interface Charge Induced Effects on Subthreshold Current and Subthreshold Swing of strained-Si (s-Si) on Silicon-Germinium-on-Insulator (SGOI) MOSFETs, accepted for oral presentaion in CODEC-12, CU, Kolkata
  18. Mirgender Kumar, Sarvesh Dubey, Abirmoya Santra, Pramod Kumar Tiwari and S. Jit, An Analytical Study of Short-Channel Effects of Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs Including Interface Charges, ICQNM-2012, Roma, Italy, Aug 19-24,2012.
  19. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, Extremely Scaled EOT Bi-Layered stacked High-k (BSK) Double-Material Double-Gate (DM DG) Strained-Si (S-Si) Channel MOSFET for High Performance Band-Edge (BE) CMOS Technology, RANET-2011, IIITM Gwalior.
  20. Abirmoya Santra, Sarvesh Dubey, Mirgender Kumar, Pramod Kumar Tiwari and S. Jit, An Analytical Study of Effect of Interface Charges on the Surface Potential of Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs, Emerging trend in Electrical and Electronics Engineering,ETEEE-2011, KNIT Sultanpur, U.P. India, pp-56-57
  21. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, ATLASTM Based Simulation Study of Surface Potential of Double-Material-Gate Strained-Si on Silicon-Germanium-on-Insulator (DMG-SGOI) MOSFETs, Accepted for publication in the proceedings of International Conference on Multimedia Signal Processing and communication technologies 2011( IMPACT 2011), Aligarh Muslim University, India.
  22. Harshit Agnihotri, Abhishek Ranjan, Pramod Kumar Tiwari and S.Jit, An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs, IEEE Computer Society Annual Symposium on VLSI (ISVLSI-2011), 327-328.
  23. Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit, “A Drain Current Model for Short-Channel Doped Double-Gate (DG) MOSFETs with Vertical Gaussian-like Doping Profile”, Accepted in 5th International Conference on Quantum, Nano and Micro Technologies (ICQNM-11), August, France, 2011.
  24. Pramod Kumar Tiwari, Sarvesh Dubey and S.Jit, Doping dependent threshold voltage model for short-channel double-gate(DG) MOSFETs, in International symposium on semiconductor materials and devices -2011, held at M. S. University, Vadodara, India.
  25. Sarvesh Dubey, Dhiraj Gupta, Pramod Kumar Tiwari, and S.Jit, 2D analytical modeling of threshold voltage of doped short-channel triple-material double-gate(TM-DG) MOSFETs , International symposium on semiconductor materials and devices -2011, held at M. S. University, Vadodara, India.
  26. Pramod Kumar Tiwari, Sarvesh Dubey, Manjeet Singh and S. Jit, An Analytical Subthreshold Current Model for Triple Material Double Gate (TMDG) MOSFETs ,in Proc. International Conference on Electronics System- 2011(ISBN: 978-93-80697-50-5), NIT Rourkela, pp.142-145, 2011.
  27. Pramod Kumar Tiwari, Sarvesh Dubey and S.Jit, “ A short-channel subthreshold swing model for asymmetric 3-T DG MOSFETs” in proc. International conference on solid-state and integrated circuit technology (ICSICT-2010), Shanghai, ROC, pp. 1796-1798.
  28. Pramod Kumar Tiwari, Sarvesh Dubey and S.Jit, Subthreshold current model for gaussian doped dG MOSFET, In the proceeding of the Latest Trends on Circuits System and Signal, Greece,2010, pp. 27-34
  29. Pramod Kumar Tiwari, C. R. Panda, A. Agarwal, P. Sharma and S. Jit, "Analytical Modeling of Effective Conduction Path Effect (ECPE) on the Subthreshold Swing of DG-MOSFETs," published in the procd. of Spanish Conference on Electron Devices (CDE),pp. 136-139,2009,available on line at www.ieee.org.
  30. Pramod Kumar Tiwari, Samarth Mittal, Vaibhav Srivastava, Utkarsh Pandey and S. Jit, "A 2D Analytical Model of the Channel Potential and Threshold Voltage of Double-Gate (DG) MOSFETs With Vertical Gaussian Doping Profile," published in the procd of IMPACT-2009, Aligarh, pp.52-55. 2009,
  31. S.Dubey, Pramod Kumar Tiwari and S.Jit," Surface potential model for Gaussian doped DG MOSFET" in proc. IWPSD-2009, J.M.I. New Delhi
  32. S. Maheshwari,Pramod Kumar Tiwari and I. A. Khan, "Fully differential first order all-pass filter circuit," presented at National Conference: MTECS-08, AMU ,2008.

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