Reasearch Interests

Semiconductor Devices and Circuits

Qualifications

Ph.D. (2012) in Electronics Engineering at Indian Institute of Technology (BHU) Varanasi, UP, India

Teaching/Research Experience

05/12/2019 - Till Date, Associate Professor, Electrical Engineering, IIT Patna , Bihar

18/01/2016 - 04/12/2019, Assistant Professor, Electrical Engineering, IIT Patna , Bihar

26/07/2011 - 15/1/2016, Assistant Professor, Electronics & Communication Engineering, NIT Rourkela, Odisha.

Courses Taught

Undergraduate

1. Basic Electronics
2. Semiconductor Devices & Circuits
3. Analog Communication
4. Analog Integrated Circuits
5. Fundamentals of Communication
6. Electrical Sceinces
7. Basic Electronics Laboratory
8. Analog Electronics Laboratory

Postgraduate

1. Low-power VLSI Circuits
2. VLSI Technology
3. MOS Modeling & Simulations
4. Device Simulation Laboratory

Invited Talks/Guest Lectures

1. NIT Rourkela, 2012
2. NIT Rourkela, 2013
3. GBPEC, Pauri Garhwal Uttarakhad, April 2-3,2017,2017
4. IIT (BHU) Varanasi July 17-22, 2017
5. GBPEC, Pauri Garhwal Uttarakhad, October 10th & 11th, 2017
6. GBPEC, Pauri Garhwal Uttarakhad, 07/05/2018 to 11/05/2018
7. SMVD University Katra 07/05/2018 to 11/05/2018
8. IIT Patna, Dec 24, 2018,
9. IIT Patna July 6-8, 2018
10. JIIT Noida, 15/2/2019
11. Parla Maharaj Engineering College (PMEC),Berhampur, Orrisa 27/2/2019
12. PEC,Jammu, May 4, 2020
13. Ram Manohar Lohia Avadh University, U.P. 1/7/2020
14. GBPEC Pauri, Uttarakhand, 26/8/2020
15. NIT Calicut, Kerla, 27/8/2020
16. IIT Patna, 19/11/2020
17. BIT Mesra, Deoghar Campus, 30/1/2021
18. NIT Patna, 27/1/2021
19. NIT Meghalya, 27/1/2021
20. GEC Raipur, 2/3/2021
21. NIT Hamirpur, 4/6/2021
22. KNIT Sultanpur, 27/7/2021
23. IIIT Bhagalpur, 14/12/2021
24. NIT Warangal, 16/2/2022
25. IEEE, WDC Goa, 24/3/2022
26. IIT Patna, 22/7/2022
27. IEEE WDC, Khajuraho, MP, 26/1/2023
28. NIT Uttarakhand,17/2/2023
29. IIT Patna, 22/3/2023
30. NTHU Taiwan, 26/4/2023
31. IIIT Allahabad, 25/8/2023
32. BIT Mesra, 09/03/2024

Short-term courses organized

1. MOSFET Modeling and Simulations (MMS) from July 7, 2018 to July 9, 2018
2. Helth Techonology Innovation, Incubation Center IIT Patna, Dec 24-28, 2018
3. Helth Techonology Innovation, Incubation Center IIT Patna, Dec 20-24, 2019 (Sponsered)
4. Enterpenurship Development Program,Incubation Center IIT Patna, Jan 20-25, 2020 (Sponsered)
5. Electronics System Development & Manufacuring: Product development, Incubation Center IIT Patna, Fab 6-13, 2020 (Sponsered)
6. Electronics System Development & Manufacuring: Product development, Incubation Center IIT Patna, Fab 25-March 3, 2020 (Sponsered)
7. Enterpenurship Development Program,Incubation Center IIT Patna, Fab 25-March 3, 2020 (Sponsered)
8. 3D Printing 1 Day Training, IIT Patna Jan 30, 2022
9. IOT with AI & Data Sciences, March 11-March 16, 2022 (Sponsered)
10. 3D Printing and Design, IIT Patna, June 1-5, 2022
11. 3D Printing, For faculty members of various polytechnique colleges of UP, online mode, Sep 19-23, 2022
12. AI-enabled IoT for Healthcare and Medical Electronics (Karyashala), Jan 16-22, 2023
13. Brain-inspired/Neuromorphic Computing for Responsible AI (Karyashala), March 20-26, 2023
14. India's Techade-Chips for viksit Bharat, March 13, 2024

Administrative Responsibilities

1. Associate Dean, Student Affairs, IIT Patna, from June 10, 2023 to till date
2. Nodal Officer, Swachhata Pakhwada, IIT Patna, Sep 20, 2023 to Oct 2, 2023
3. Memeber, WGRC, IIT Patna Since Jan 31, 2023
4. Warden, Aryabhatta Hostel, IIT Patna, from Oct 21, 2022 to June 16, 2023
5. Board of Studies Meeting, NIT Jamshedpur, June 23, 2022
6. Memebr, Senate IIT Patna, Since March 8 to Nov 21, 2022
7. Convener, Startups and Entrepreneurship Activities, TIH, IIT Patna, from Aug 2021 to July 2022
8. Member, DPR Committee, Technology Innovation Hub Project, IIT Patna
9. Professor in Charge, Incubation Center, IIT Patna 1/12/2017- 20/7/2021
10. Nodal Officer, Bihar Statrtup Policy, BUV, 1/12/2017- 20/7/2021
11. PIC, Communication, 1/7/2017 to 1/12/2017
12. Faculty Advisor of M.Tech 2018 Batch
13. Member of Institute Registration Committee, 1/12/2016 to 1/12/2017
14. Departmental Representative to Computer Centre
15. Faculty Advisor of B.Tech 2016 Batch
16. PIC, Research Scholar Day 2017
17. Member of Department Purchase Committee, for 2 Years
18. Secretary, DAPC, Electrical Engineering till Jan, 2018 (for 1 Year)
19. Attended Board of Studies meeting of GB Pant Engg College, Pauri Garhwal, an autonomous institute of Uttarakhand Gov
20. IIT Patna representative of syllabus review committee of Aryabhata Knowledge University, Patna, Bihar
21. Assistant Warden, Homi Bhabha Hall, NIT Rourkela from 2013-2015
22. Member, APOC, NIT Rourkela, 2015
23. NBA Acredation responsibility, VLSI & ES, NIT Rourkela
24. Faculty Advisor, B.Tech 2012 Batch, ECE, NIT Rourkela
25. PIC, Direct Purchase, ECE, NIT Rourkela 2015-2016

Honours & Awards

1. Visiting Researcher, NTHU, Taiwan
2. Associate Editor, IET Circuit Devices and System (IET-CDS) Journal, since July 2022
3. Seceratery, IC IIT Patna Soceity Dec 2017- July 2021
4. Name appeared in Golden list of Reviwers published by IEEE TED and EDL
5. Senior Member IEEE and IEEE EDS
6. Life Member Indian Society of Technical Education (ISTE)
7. Young Scientist Research Grant
8. UGC Senior Research Fellow
9. Awarded Travel Grant from Department of Science and Technology
10. Served as a reviewer for: IEEE EDL, TED, T Nano, IET-CDS, IEEE Sensor J, Super lattices and Microstructure journal, Microelectronics reliability,SSE,JAP, CAP,JCEL, IET Journals,JEM etc

Contribution as PIC Incubation Center

1. Restructuring of the IC IITP Society
2. Transition of IC accounting from R&D to IC
3. DST Recognition for IC
4. Preparation of Legal agreements for use of IC
5. Construction of IC permanent facility
6. Projects Secured for Incubation Center: Nidhi Prayas & EIR (11 Cr) (DST), Support for Entrepreneurial and Managerial Development of MSMEs through Incubators (15 Lakhs)(MSME
7. Agreements with AIIMS Patna for medical product trial

Projects

Ph.D students

M.Tech students

Selected Research Publications

Selected Book Chapter

1. Pramod Kumar Tiwari, Sarvesh Dubey and S. Jit, Double-Gate (DG) MOSFETs: A Review, Advances in Microelectronics and Photonics, Nova Science Publishers, USA, 2012(ISBN: 978-1-61470-956-5).
2. Arun Kumar, and Pramod Kumar Tiwari, Silicon Nanotube FETs: From device concept to analytical model development, Cutting-Edge Research on Low-Dimensional Nanoelectronic Devices: Physics and Material Science Aspects, Apple Academic Press, USA, In production (ISBN: 9781774638668).

Selected International Journals

3. Ashraf Maniyar, Pushp Raj, PSTN Srinivas, Arun Kumar, Kuei-Shu Chang-Liao, Pramod Kumar Tiwari, "Impact of Process-Induced Inclined Side-Walls on Gate Leakage Current of Nanowire GAA MOSFETs" IEEE Transactions on Electron Devices , vol. 71 , pp. 2196 - 2202, 2024
4. Sai Shirov Katta, Tripty Kumari, PSTN Srinivas, Pramod Kumar Tiwari,"Logic-in-memory application of silicon nanotube-based FBFET with core-source architecture" Microelectronics Journal , vol. 146 , pp.106133, 2024
5. Binay Binod Kumar, Shubham Kumar, Pramod Kumar Tiwari, Aniruddh Bahadur Yadav, Sarvesh Dubey, Kunal Singh,"Performance Investigation of Bottom Gate ZnO Based TFT for High-Speed Digital Display Circuit Applications" Transactions on Electrical and Electronic Materials , vol. XX , pp. XX-XX, 2024
6. Subir Das, Tripty Kumari, Sai Shirov Katta, Pushp Raj, Jawar Singh, Pramod Kumar Tiwari, "Design and performance analysis of tri-layered strained Si/Si1−xGex/Si heterostructure DG feedback FET" Physica Scripta , vol. 99, pp. 045940, 2024
7. Subir Das, Sai Shirov Katta, Pushp Raj, Jawar Singh, Pramod Kumar Tiwari, "Design and performance analysis of Si-SiGe heterostructure based double gate feedback FET" Physica Scripta , vol. 99, pp. 025939, 2024
8. Neha Kamal, Jawar Singh, Avinash Lahgere, , Pramod Kumar Tiwari, "Ultra-low power reconfigurable synaptic and neuronal transistor for spiking neural network" IEEE Transaction on Nanotechnology , vol. 22, pp.245-251, 2023
9. Sai Shirov Katta, Tripty Kumari, Subir Das, Pramod Kumar Tiwari, "Design and performance assessment of a vertical feedback FET" Microelectronics Journal , vol. 137, pp.105806(6), 2023
10. Sandeep Moparthi, Pramod Kumar Tiwari, and Gopi Krishna Saramekala, "Negative capacitance silicon nanotube FET: a subthreshold modeling exploration of sub‑60 mV/decade swing, negative drain‑induced barrier lowering, and threshold voltage roll‑of" Journal of Computaional Electronics , vol. 22, pp.250-259, 2023
11. P. S. T. N. Srinivas, S. Jit, and Pramod Kumar Tiwari, Impact of self-heating on thermal noise in In1−xGaxAs GAA MOSFETs, Microelectronics Journal, vol. 131, pp. 105661(7), 2023
12. T Kumari, J Singh, Pramod Kumar Tiwari,“Unified Modeling of Gate Insulator Capacitance of Nonplanar MOSFETs Including the Impact of Inclined Sidewalls and Rounded-Corners”, IEEE Transactions on Electron Devices, vol 70 , issue 1, pp.13-19, 2023.
13. Sandeep Moparthi, Pramod Kumar Tiwari, and Gopi Krishna Saramekala “Impact of Drain Voltage Coupling on Device and Circuit-Level Performance of Negative Capacitance Silicon Nanotube FET", IEEE Transaction on Nanotechnology, vol. 21, pp. 547 - 554, 2022
14. A Maniyar, P.S.T.N. Srinivas, Pramod Kumar Tiwari , and Kuei-Shu Chang Liao “Impact of Process-Induced Inclined Sidewalls on Gate-Induced Drain Leakage (GIDL) Current of Nanowire GAA MOSFETs”, IEEE Transactions on Electron Devices , vol 69, issue 9, pp.4815-4820, 2022.
15. T Kumari, J Singh, Pramod Kumar Tiwari,“Split-Gate Induced High-Field for Impact Ionization Triggered Bipolar Action and Sub-KT/q Switching in Junctionless FET”, IEEE Transactions on Nanotechnology, vol 21, issue 8, pp.332-339, 2022.
16. Ajit Kumar, Pramod Kumar Tiwari, J. N. Roy, “Subthreshold model of asymmetric GAA junctionless FETs with scaled equivalent oxide thickness”, Microelectronics Journal, vol 126, issue 8, pp.105490 (7), 2022.
17. P. S. T. N. Srinivas, and Pramod Kumar Tiwari, Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As based gate-all-around MOSFETs, IEEE Transactions on Device and Materials Reliability, vol. 22, pp. 42-49, 2022
18. Tripty Kumari, Pramod Kumar Tiwari, Jawar Singh, and Kuei-Shu Chang Liao, Subthreshold Modeling of GAA MOSFET including the Effect of Process-Induced Inclined Sidewalls, IEEE Transactions on Electron Devices, vol. 69, pp. 487-494, 2022
19. P. S. T. N. Srinivas, Arun Kumar, and Pramod Kumar Tiwari, Effect of Self-Heating on Small-Signal Parameters of In0.53Ga0.47As Based Gate-All-Around MOSFETs, Semiconductor Science and Technology (SST), vol. 36, pp. 125012(9) , Dec. 2021
20. Tripti Kumari, Jawar Singh, and Pramod Kumar Tiwari, “Investigation of Ring-TFET for Better Electrostatics Control and Suppressed Ambipolarity", IEEE Transaction on Nanotechnology, vol. 19, pp. 829-836, 2020
21. Sandeep Moparthi, Pramod Kumar Tiwari,Visweswara Rao Samoju,and Gopi Krishna Saramekala “Investigation of Temperature and Source/Drain Overlap Impact on Negative Capacitance Silicon Nanotube FET (NC Si NTFET) with Sub-60mV/decade Switching", IEEE Transaction on Nanotechnology, vol. 19, pp. 800-806, 2020
22. Sandeep Kumar,Yashvir Singh, Balraj Singh, and Pramod Kumar Tiwari, “Simulation Study for Dielectric Modulated Dual Channel Trench Gate TFET Based Biosensor", IEEE Sensors Journal, vol. 20, pp. 12565-12573, Nov. 2020
23. P. S. T. N. Srinivas, Arun Kumar, S.Jit, and Pramod Kumar Tiwari, “Self-heating effects and hot carrier degradation in In0.53Ga0.47As Gate-All-Around (GAA) MOSFETs", Semiconductor Science and Technology (SST), vol. 35, pp. 065008-15, March. 2020
24. Deepti Gola, Balraj Singh, and Pramod Kumar Tiwari, “Thermal Noise Models for Trigate Junctionless Transistors Including Substrate Bias Effects, IEEE Transactions on Electron Devices, vol. 67, pp. 263-269, Jan. 2020
25. Arun Kumar, P.S.T.N. Srinivas, and Pramod Kumar Tiwari , “An Insight into Self-heating Effects and its Implications on Hot Carrier Degradation for Silicon-Nanotube-based double gate-all-around (DGAA) MOSFETs", IEEE Journal of Electron Devices Society, vol. 7, pp. 1100-1108, Nov. 2019
26. Deepti Gola, Balraj Singh, Jawar Singh, Satyabrata Jit, and Pramod Kumar Tiwari, "Static and Quasi-Static Drain Current Modeling of Tri-Gate Junctionless Transistor with Substrate Bias Induced Effects", IEEE Transactions on Electron Devices , Volume: 66 , pp: 2876 – 2883, 2019
27. Subhradeep Pal, Pramod Kumar Tiwari, and Sumanta Gupta, "An Electrostatic Doping Assisted Silicon Electro-Absorption Modulator For Intra-Chip Communications", IEEE Transactions on Electron Devices , Vol: 66 , no: 5 , pp: 2269-2275, 2019
28. Deepti Gola, Balraj Singh, Pramod Kumar Tiwari, "Subthreshold Characteristic Analysis and Models for Tri-Gate SOI MOSFETs using Substrate Bias Induced Effects", IEEE Transactions on Nanotechnology , Vol: 18 , no: 3 , pp: 329-335, 2019
29. Arun Kumar, and Pramod Kumar Tiwari, "Drain current modeling of double gate-all-around (DGAA) MOSFETs", IET-Circuits Devices and Systems (Previously IEE-CDS) , Vol: 13, pp: 519-525, 2019
30. Arun Kumar, and Pramod Kumar Tiwari, "An Explicit Unified Drain Current Model for Silicon-Nanotube-Based Ultra-thin Double Gate-All-Around (DGAA) MOSFETs", IEEE Transactions on Nanotechnology , vol 17, no 6, pp:1224-34, 2018.(IF=2.8)
31. Deepti Gola, Balraj Singh and Pramod Kumar Tiwari, "Subthreshold Modeling of Tri-Gate Junctionless Transistors With Variable Channel Edges and Substrate Bias Effects", IEEE Transactions on Electron Devices, Vol. 65, no.5, pp.1663 - 1671, MAY 2018.
32. Deepti Gola, Balraj Singh and Pramod Kumar Tiwari, "A Threshold Voltage Model of Tri-Gate Junctionless Field-Effect Transistors Including Substrate Bias Effects", IEEE Transactions on Electron Devices, Volume: 64, Issue:9,pp. 3534 – 3540, 2017. (IF=2.605, h5 index 80)
33. Arun Kumar, Shiv Bhushan, and Pramod Kumar Tiwari, "Threshold voltage modeling of ultra-short Double-gate–all-arround MOSFETs considering quantum confinement effects", IEEE Transaction on NanoTechnology, Volume: 16, Issue: 5, pp. 868 – 875, 2017. (IF=2.485, h5 index 34)
34. Ajit Kumar, Pramod Kumar Tiwari, “A threshold voltage modeling of Re-S/D SOI MOSFETs including SISP effects”, Solid State Electronics, vol 95, issue 5, pp.52-60, 2014. (SCI , Impact factor :1.345)
35. Sarvesh Dubey, Abirmoya Santra, Gopi Krishna S., Mirgender Kumar, Pramod Kumar Tiwari, An analytical threshold voltage model for triple-material gate-all-around (TM-GAA) MOSFETs, IEEE Transactions on Nanotechnology, vol 12, no5, pp: 766-773,2013. (SCI , Impact factor :2.47)
36. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit, “Analytical Modeling and Simulation of Subthreshold Characteristics of Back-Gated SSGOI and SSOI MOSFETs: A Comparative Study”, Current Applied Physics, vol.13, pp.1778-1786, 2013. (SCI , Impact factor :2.144)
37. Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “A short-channel subthreshold current and subthreshold swing model for Double-Gate (DG) MOSFETs with a vertical Gaussian-Like Doping Profile”, Journal of Applied Physics, 109, 054508(7), 2011. (SCI , Impact factor :2.185)
38. Pramod Kumar Tiwari, S. Dubey, M. Singh and S. Jit, “A two-dimensional analytical model for threshold voltage of short-channel triple-material double gate (TM-DG) MOSFETs”, Journal of Applied Physics , 108, pp.074508, 2010. (SCI , Impact factor: 2.185)
39. Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “A 2D Model for the Potential Distribution and Threshold Voltage of Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile”, Journal of Applied Physics, 108, (3), pp.034518 (7), 2010. (SCI , Impact factor :2.185)
40. Pramod Kumar Tiwari, C. R. Panda, P. Sharma, A. Agrawal and S.Jit, “Doping Dependent subthreshold swing model for DG MOSFETs”, IET-Circuits Devices and Systems (Previously IEE-CDS), Vol.4, No.4, pp.337-345, 2010. (SCI , Impact factor :0.91)
41. S. Jit, P. K. Pandey, and Pramod Kumar Tiwari, “Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si-SOI-MESFETs”, Solid-State Electronics., vol. 53, pp. 57-62, 2009. (SCI , Impact factor :1.514)
42. Binay Binod Kumar, Pramod Kumar Tiwari, Sarvesh Dubey, Kunal Singh, "Design and investigation of ZnO based thin film transistors for high-speed AMLCD pixel circuit applications", Supperlattice and Microstructure Journal , Vol 164, issue 4, pp.107122 (11), 2022
43. Yograj Singh Duksh, Balraj Singh, Deepti Gola , Pramod Kumar Tiwari, “Self-heating and Negative Differential Conductance Improvement by Substrate Bias Voltage in Tri-gate Junctionless Transistor", Silicon , vol. XX, pp XX-XX, 2021
44. Yograj Singh Duksh, Balraj Singh, Deepti Gola , Pramod Kumar Tiwari, S.Jit, “Subthreshold Modeling of Graded Channel Double Gate Junctionless FETs", Silicon , vol. 31, pp. 1231-1238, 2021
45. Vaibhav Purwar, Rajeev Gupta, Nitish Kumar, Himanshi Awasthi, Vijay Kumar Dixit, Kunal Singh, Sarvesh Dubey, Pramod Kumar Tiwari, “Investigating linearity and efect of temperature variation on analog/ RF performance of dielectric pocket high-k double gate-all-around (DP-DGAA) MOSFETs", Applied Physics A , vol. 126, pp. 746, 2020
46. Sandeep Moparthi, K.P. Adarsh, Pramod Kumar Tiwari, and Gopi Krishna Saramekala, “Analog and RF performance evaluation of negative capacitance SOI junctionless transistor", AEU - International Journal of Electronics and Communications, vol. 122, pp. 153243, May. 2020
47. L Ramesh ,S Moparthi , Pramod Kumar Tiwari, V.R. Samoju, G.K. Saramekala , “Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO2/La2O3/HfO2 (HLH) Sandwich Gate Dielectrics", Физика и техника полупроводников (Semiconductors) , vol. 54, pp. 1098, 2020
48. M. Kumar, S. Singh, Pramod Kumar Tiwari, S.H. Park, “Simulation and Fabrication of Ag/ZnO- Nanorods/Ag Ultraviolet Detectors on p-type Silicon", Digest Journal of Nanomaterials and Biostructures , vol. 15, pp. 75-83, March. 2020
49. P. S. T. N. Srinivas, Arun Kumar, Pramod Kumar Tiwari, “Threshold Voltage Modeling of tri-Gate Schottky-Barrier (TGSB) Field-Effect-Transistors (FETs)", Silicon , vol. 13, pp. 25-35, 2021
50. Kunal Singh, S. Kumar, and Pramod Kumar Tiwari, A.B. Yadav, S. Dubey, and S. Jit, "Semianalytical Threshold Voltage Model of a Double-Gate Nanoscale RingFET for Terahertz Applications in Radiation Hardened (Rad-Hard) Environments", Journal of Electronics Material , vol. 48, pp.6366-6371, 2019 DOI:10.1007/s11664-019-07411-3
51. Arun Kumar, P. S. T. N. Srinivas, Shiv Bhushan, Sarvesh Dubey, Yatendra Kumar Singh, and Pramod Kumar Tiwari, "Threshold Voltage Modeling of Double Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors (DGAA MOSFETs) Including the Fringing Field Effects", Journal of Nanoelectronics and Optoelectronics , Vol. 14, pp. 1–10, 2019
52. Visweswara Rao Samoju, Kamalakanta Mahapatra, Pramod Kumar Tiwari, "Analytical modeling of subthreshold characteristics by considering quantum confinement effects in ultrathin dual-metal quadruple gate (DMQG) MOSFETs", Superlattices and Microstructures , Vol. 111, pp. 704-713, 2017. (IF=2.123, h5 index 57)
53. Shaivalini Singh, Pramod Kumar Tiwari, Hemant Kumar, Yogesh Kumar, Gopal Rawat, Sanjay Kumar, Kunal Singh, Ekta Goel, S. Jit, and Si-Hyun Park, "Theoretical and experimental study of UV detection characteristics of Pd/ZnO nanorod Schottky diodes", NANO: Brief reports and reviews , Volume 12, issue 11, (2017) 1750137 8 pages.
54. Balraj Singh, Trailokya Nath Rai, Deepti Gola, Kunal Singh, Ekta Goel, Sanjay Kumar, Pramod Kumar Tiwari, Satyabrata Jit, Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure", Materials Science in Semiconductor Processing , Volume 71, issue 11, Pages 161–165, 2017 (IF=2.359, h5 index 31)
55. A. Kumar., Shiv Bhushan, Pramod Kumar Tiwari, "Analytical modeling of subthreshold characteristics of ultra-thin double gateall-around (DGAA) MOSFETs incorporating quantum confinement effects", Superlattices and Microstructures, Vol. 109, pp. 567-578, 2017. (IF=2.123, h5 index 57)
56. Gopi krishna Saramekala, Pramod Kumar Tiwari, "Analytical subthreshold current and subthreshold swing models for a fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFET with back-gate control" TMS Journal of Electronic Materials , Vol.46, No. 8, pp-5046-5056, 2017 (SCI, Impact factor: 1.579) h5 index: 34
57. Visweswara Rao Samoju, Sradhanjali Mohapatra, Shiv Bhushan, and Pramod Kumar Tiwari, "Analytical Modeling and Simulation of Subthreshold Characteristics of RecessedSource/Drain (Re-S/D) Silicon-on-Insulator MOSFETs with Gaussian Doping Profile, Journal of Nanoelectronics and Optoelectronics , Vol. 12, No 5., pp. 490-498, 2017. (SCI, Impact factor: 0.591) h5 index: 17
58. Gopi krishna Saramekala, Pramod Kumar Tiwari,“An Analytical threshold voltage model for a fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFET with back-gate control”, TMS Journal of Electronic Materials , vol.45, pp. 5367, 2016. (SCI, Impact factor: 1.491) h5 index: 32
59. Pramod Kumar Tiwari, Visweswara Rao Samoju, Thandva Sunkara, Sarvesh Dubey, Satyabrata Jit, “Analytical Modeling of Threshold Voltage for Symmetrical Silicon Nano-Tube Field-Effect-Transistors (Si-NT FETs)”, Journal of Computaional Electronics , Vol. 15, no. 2, pp 516-524, 2016. (SCI, Impact factor: 1.104)
60. Pramod Kumar Tiwari, Mukesh Kumar, R Shakru Naik, Gopi krishna Saramekala, “Analog and RF performance study of SiNT MOSFETs”, Journal of Semiconductors , Vol. 37, pp. 064003(1-4), 2016.
61. Pramod Kumar Tiwari, Visweswara Rao Samoju, Tuhinanshu Gaurav, “A doping dependent subthreshold swing modeling of QG MOSFETs”, Journal of Nanoengineering and Nanomanufacturing , Vol. 5, pp. 1-6, 2015. (doi:10.1166/jnan.2015.1244)
62. Gopi krishna Saramekala, Pramod Kumar Tiwari, “A ballistic subthreshold current model for ultra-short channel recessed-source/ drain (Re-S/D) SOI MOSFETs”, Journal of Nanoengineering and Nanomanufacturing , Vol. 5, pp. 1-5, 2015. (doi:10.1166/jnan.2015.1239)
63. Visweswara Rao Samoju, Pramod Kumar Tiwari, “Threshold voltage modeling for dual-metal quadruple-gate (DMQG) MOSFETs”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , 2015 (doi: 10.1002/jnm.2126). ( SCI, Impact factor: 0.515)
64. Gopi krishna Saramekala, Sarvesh Dubey, Pramod Kumar Tiwari, “An Analytical threshold voltage model for recessed source drain SOI MOSFETs with high-k dielectric”, Chinese Physics B , vol. 24, pp. 10505, 2015 (SCI, Impact factor: 1.603)
65. Visweswara Rao Samoju, Sarvesh Dubey, Pramod Kumar Tiwari, “Quasi-3D subthreshold current and subthreshold swing Models of Dual-Metal Quadruple-Gate (DMQG) MOSFETs” Journal of Computaional Electronics , vol: 14 pp :582–592, 2015 (SCI, Impact factor :1.104)
66. Visweswara Rao Samoju, Satyabrata Jit, Pramod Kumar Tiwari, “A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate (DMQG) MOSFETs”, Chinese Physics letter , Vol. 31 (12), pp. 128502,2014. (SCI, Impact factor :0.927)
67. Gopi krishna Saramekala, Sarvesh Dubey, Pramod Kumar Tiwari, “ Numerical simulation based study of analog and RF performance of a Re-S/D SOI MOSFETs” Supperlattices and Microstructures Journal , Volume 76, , Pages 77–89, December 2014. (SCI, Impact factor :2.117)
68. Pramod Kumar Tiwari, Gopi Krishna Saramekala, Annad Mukhopadhaya, Sarvesh Dubey, Analytical subthreshold current and subthreshold swing models for DMG strained-Si MOSFETs, Journal of Semiconductors , vol. 35, no 10, pp. 104002(7), 2014.
69. Gopi Krishna S., Abirmoya Santra, Pramod Kumar Tiwari, “Analytical subthreshold current and subthreshold swing models for a short-channel dual-metal-gate (DMG) fully depleted recessed-source/drain (Re-S/D) SOI MOSFET’, Journal of Computaional Electronics , vol 13, pp.467-476, 2014. (SCI , Impact factor :1.104)
70. Abirmoya Santra, Mirgender Kumar, Sarvesh Dubey, Satyabrata Jit, Pramod Kumar Tiwari, “Analytical modeling of threshold voltage of stacked Triple-Material-Gate (TMG) Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs”, Journal of Active and Passive Electron Devices , Vol. 9, pp. 235-257, 2014.
71. Gopi Krishna S., Abirmoya Santra, Sarvesh Dubey, Satyabrata Jit, Pramod Kumar Tiwari, “An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed- source/drain (Re-S/D) SOI MOSFET”, Supperlattices and Microstructures Journal , vol-60,issue-8, pp:580-595,2013. (SCI , Impact factor :1.979)
72. Santunu Sarangi, Shiv Bhushan, Abirmoya Santra, Sarvesh Dubey, Satyabrata Jit and Pramod Kumar Tiwari, A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs, Supperlattices and Microstructures Journal , vol-60, issue8,263-279,2013. (SCI , Impact factor :2.117)
73. Shiv Bhushan, Santunu Sarangi, Gopi Krishna S., Abirmoya Santra , Sarvesh Dubey, Pramod Kumar Tiwari, “An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Si (s-Si) Channel on Silicon-Germanium (SiGe) Substrates”, IEEK-Journal of Semiconductor Technology Sciences , vol 13, no 4, pp367-380, 2013. (SCI , Impact factor :0.62)
74. Mrigendra Kumar, Sarvesh Dubey , Pramod Kumar Tiwari , S. Jit , “Two-Dimensional Modeling of Subthreshold Current and Subthreshold Swing of Double-Material-Gate (DMG) Strained-Si (s-Si) on SGOI MOSFETs”, Journal of Computaional Electronics , vol-12, issue 2, pp;275-280, 2013. (SCI , Impact factor :1.104)
75. Sarvesh Dubey , Mrigendra Kumar, Pramod Kumar Tiwari, S. Jit, “Analytical threshold voltage model for short-channel Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs with localized charges”, Journal of Computational and Theoretical Nano. Sciences , vol 11, issue 1, pp:1-8, 2014. (SCI , Impact factor :1.104)
76. Mrigendra Kumar, Sarvesh Dubey, Pramod Kumar Tiwari , S. Jit, “Analytical subthreshold current and subthreshold swing model for Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs”, Supperlattice and Microstructure Journal , Vol 58, issue 4, pp.1-10, 2013. (SCI , Impact factor :2.117)
77. Mrigendra Kumar, Sarvesh Dubey , Pramod Kumar Tiwari, “S. Jit, An analytical model of threshold voltage for short-channel double-material gate strained-Si on Silicon Germenioum on isulator MOSFET”, Journal of Computaional Electronics , vol 12, issue 1, pp 20-28, 2013. (SCI , Impact factor :1.104)
78. Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit, “On current modeling of Gaussian doped DG MOSFET”, Journal of Semiconductors , vol. 34, no.5, pp 054001(8), 2013.
79. Shiv Bhushan, Santunu Sarangi, Abirmoya Santra, Mirgender Kumar, Sarvesh Dubey, S. Jit, Pramod Kumar Tiwari, “An analytical surface potential model for s-Si on SiGe MOSFET including the effects of interface charges”, Journal of Electron Devices , vol.15, pp. 1285-1290, 2012. (SCI, Impact factor :0.48)
80. Pramod Kumar Tiwari, Sarvesh Dubey and S. Jit, “Analytical modeling for the subthreshold current and subthreshold swing of the triple-material double-gate(TM-DG) MOSFETs”, Supperlattice and Microstructure Journal , vol. 51(5), pp. 715-724, 2012. (SCI , Impact factor :1.979)
81. Pramod Kumar Tiwari and S.Jit, “A 2D Model for Potential Distribution and Threshold Voltage of Double-Gate (DG) MOSFETs with Vertical Gaussian Doping Profile”, Journal of Nan electron. Optoelectron. , vol. 6(2), pp. 207-213(7), 2011. (SCI)
82. Pramod Kumar Tiwari, Sarvesh Dubey and S.Jit, “Doping dependent threshold voltage model for short-channel double-gate(DG) MOSFETs”, J. Nano- Electron. Phys , . 3 No1, 963, 2011. (SCI , Impact factor :0.256)
83. Sarvesh Dubey, Dhiraj Gupta, Pramod Kumar Tiwari, and S. Jit, “2D analytical modeling of threshold voltage of doped short-channel triple-material double-gate (TM-DG) MOSFETs”, J. Nano- Electron. Phys. 3 No1, 576, 2011. (SCI , Impact factor :0.256)
84. Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile”, J. Nanoelectron. Optoelectron. , 5, 332-339, 2010. (SCI)
85. Pramod Kumar Tiwari and S. Jit, “Subthreshold current model for short-channel double-gate (DG) MOSFETs with vertical Gaussian doping profile” Journal of Computational and Theoretical Nano. Sciences , vol. 8(7), pp. 1296-1303, 2011. (SCI , Impact factor :1.03)
86. Pramod Kumar Tiwari and S.Jit, “A Doping-Dependent Short-Channel Subthreshold Current model for Symmetric Double-Gate (DG) MOSFETs” Journal of Nanoelectronics and Optoelectronics (JNO) ., Vol. 5, No.1, pp. 82-88, 2010. (SCI)
87. Pramod Kumar Tiwari and S.Jit, “A 2D Model for Potential Distribution and Threshold Voltage of Symmetric Double-Gate (DG) MOSFETs With Vertical Gaussian Doping Profile”, Journal of Electron Devices (France) ,vol.7, pp.241-249, 2010. (SCI , Impact factor :0.48)
88. Pramod Kumar Tiwari and S.Jit, “A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping”, IEEK-Journal of Semiconductor Technology Sciences , Vol.10, N0.2, pp.107- 117, 2010. (SCI , Impact factor :0.62)

Conference Publications

89. Ashraf Maniyar, PST N Srinivas, and Pramod Kumar Tiwari, “Impact of Process-Induced Inclined Sidewalls On Small Signal Parameters of Silicon Nanowire GAA MOSFET," TENCON 2023-2023 IEEE Region 10 Conference (TENCON), Chiang Mai, Thailand, 2023.
90. P.S.T.N. Srinivas, A. Kumar, and Pramod Kumar Tiwari, “In0.53Ga0.47As Nanosheet MOSFETs with Self-Heating Effects," IEEE Silchar Subsection Conference (SILCON), NIT Silchar, 2022.
91. Tripty Kumari, Jawar Singh, Pramod Kumar Tiwari , "Impact of Non-Rectangular Cross-Section on Electrical Performances of GAA FETs" in 2021 IEEE 18th India Council International Conference (INDICON), Guwahati, India, Dec 2021.
92. Sandeep Moparthi, Pramod Kumar Tiwari , and Gopi Krishna Saramekala, "Genetic algorithm-based threshold voltage prediction of SOI JLT using multi-variable nonlinear regression" in International Symposium on Devices, Circuits and Systems (ISDCS), Higashihiroshima, Japan, March 2021.
93. Sandeep Moparthi, Chandan Yadav, Gopi Krishna Saramekala, and Pramod Kumar Tiwari, "Machine Learning Based Device Simulation Using Multi-variable Non-linear Regression to Assess the Impact of Device Parameter Variability on Threshold Voltage of Double Gate-All-Around (DGAA) MOSFET" IEEE International Conference on Circuits and Systems (ICCS), Chengdu, China Dec 2020
94. Arun Kumar, P.S.T.N. Srinivas, and Pramod Kumar Tiwari , “Analytical Modeling of Subthreshold Current and Subthreshold Swing of Schottky-Barrier Source/Drain Double Gate-All-Around (DGAA) MOSFETs,” in 5th IEEE International Symposium on Smart Electronic Systems, Rourkela, Dec. 2019.
95. Deepti Gola, Balraj Singh, and Pramod Kumar Tiwari , "Analytical Modeling of Analog/RF Parameters for Trigate Junctionless Field Effect Transistor Incorporating Substrate Biasing Effects”, accepted in Proc. IEEE TENCON 2019, 17-20th Oct. 2019.
96. A. Kumar, P.S.T.N. Srinivas, and Pramod Kumar Tiwari, “Compact Drain Current Model for Ultra-thin Double Gate-All-Around (DGAA) MOSFETs Incorporating Short Channel Effects," IEEE NMDC, Stockholm Oct. 2019.
97. A. Kumar, P.S.T.N. Srinivas, and Pramod Kumar Tiwari, “Analytical Modeling of Subthreshold Characteristics of Silicon-Nanotube-based Double Gate-All-Around (DGAA) FETs Incorporating Fringing Field Effects," IEEE NMDC, Stockholm Oct. 2019.
98. A. Kumar, P.S.T.N. Srinivas, and Pramod Kumar Tiwari, “Physical Insight into Self-heating Effects in Ultra-thin Junctionless Gate-All-Around FETs," IEEE INEC, Kuching, July 2019.
99. A. Kumar, P.S.T.N. Srinivas, and Pramod Kumar Tiwari, “Effects of Lateral Spreading in 2-Dimensional Non-Uniform Doped Junctionless FinFETs," IEEE INEC, Kuching, July 2019.
100. A. Kumar, P.S.T.N. Srinivas, and Pramod Kumar Tiwari, "Analytical Threshold Voltage Model of Schottky-source/drain (Schottky-S/D) double gate-all-around (DGAA) Field-Effect- Transistors", Devices for Integrated Circuit (DevIC), Kalyani, March 2019
101. Subhradeep Pal, Pramod Kumar Tiwari, and Sumanta Gupta, "Novel optical modulator using junction-less metal gate MOS phase shifter on SOI platform", 2017 4th International Conference on Opto-Electronics and Applied Optics, 2017
102. S. Bhushan, A. Kumar, D. Gola, and Pramod Kumar Tiwari, "An analytical subthreshold current model of short-channel symmetrical double gate-all-around (DGAA) field-effect-transistors", Devices for Integrated Circuit (DevIC), Kalyani, March 2017 Devices for Integrated Circuit (DevIC), Kalyani, 2017, pp. 211-215.
103. Pramod Kumar Tiwari, Arun Kumar and Dipankar Talukdar, An analytical gate tunneling current model of Re- S/D SOI MOSFETs, IEEE UPCON-2016, IIT BHU.
104. Mukesh Kushwaha, Gopi Krishna Saramekala, and Pramod Kumar Tiwari “Threshold Voltage Modeling of Recessed- Source/drain Soi Mosfets with Vertical Gaussian Doping Profile” International conference on materials for advance material research society of Singapore, suntech city, 2015.
105. Srikanya Dasari, Gopi krishna Saramekala and Pramod Kumar Tiwari “virtual fabrication of short channel Recessed-Source Drain (Re-S/D) SOI MOSFETs” Third international symposium on semiconductor materials and devices, Anna university, Tamilnadu, 2015
106. Sarvesh Dubey, Anand Mukhopadhyay, Mirgender Kumar and Pramod Kumar Tiwari, “Effect of Temperature Variation on the Characteristics of Dual-Metal Gate Strained Silicon on Si1-XGeX Substrate MOSFET”, Third international symposium on semiconductor materials and devices, Anna university, Tamilnadu, 2015
107. Gopi Krishna Saramekala, Pramod Kumar Tiwari, “Analytical subthreshold current modeling of Re-S/D SOI MOSFETs with high K dielectric”, IEEE Asia Modeling Symposium 2014, Taiepi, Taiwan, ISBN 978-1-4799-6487-1, pp.258-264
108. Shara Mathew, Silpeeka Medhi, and Pramod Kumar Tiwari,, “A Performance Analysis of Hetero- Dielectric Dual-Material-Gate Silicon-on-Insulator Tunnel-Field-Effect Transistors (HD-DMG SOI TFETs)”, IEEE India conference INDICON 2014, 11-13 Dec, Yashada, Pune, India
109. Gopi Krishna S., Abirmoya Santra, Pramod Kumar Tiwari, “An analytical surface potential modeling of dual-metal-gate (DMG) recessed- source/drain (Re-S/D) SOI MOSFET, International Conf. on Advanced Trends in Engineering and Technology”, Dec 19-20, 2013, Jaipur, India, pp.160 to 163
110. Gopi Krishna Saramekala, Satyabrata Jit, and Pramod Kumar Tiwari, “ATLAS based simulation study of the electrical characteristics of dual-metal-gate (dmg) fully-depleted (fd) recessed-source/drain (RE-S/D) SOI MOSFETS”, IEEE Conference ICAEE-2014, VIT University Vellore, Jan 9-11, 2014.
111. Santunu Sarangi, Gopi Krishna .S, Abirmoya Santra, Shiv Bhushan, and Pramod Kumar Tiwari, An Analytical Surface Potential Model of a Gate Misaligned Triple-Material Double-Gate (TM DG) MOSFET, ICQNM-2013, Barcelona, Spain
112. Santunu Sarangi, Gopi Krishna .S, Abirmoya Santra, Shiv Bhushan, and Pramod Kumar Tiwari, “A Simulation-based Study of Gate Misalignment Effects in Triple-Material Double-Gate (TM DG) MOSFETs" IEEE conference proceedings, IMAC4S, Palai, Kerala Mar 2013, pp.41
113. S. Sarangi, A. Santra, S. Bhushan, Gopi Krishna S., and Pramod Kumar Tiwari, “An Analytical Surface Potential Modeling of Fully-Depleted Symmetrical Double-Gate (DG) Strained-Si MOSFETs Including the Effect of Interface Charges", IEEE conference proceedings, SCES, Allahabad, Mar 2013 pp.1-5.
114. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit, A Comparative Study of Short-Channel-Effects of strained-Si on Insulator (SSOI) and strained-Si on Silicon-Germanium-on-Insulator (SSGOI) MOSFETs, in International Conference on Electrical and Electronics Engineering (ICEEE-2013), accepted for @WCE conference proceeding, London, July 04-06, 2013.
115. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, and S. Jit, “Back Gated (BG) Strained-Si-on-Silicon-Germanium-on-Insulator (SSGOI) MOSFETs for Improved Switching Speed and Short-Channel-Effects (SCEs)”, in international conference on Recent Trends in Applied Physics and Material Science, accepted for @AIP conference proceeding, Bikaner, Feb 01-03, 2013.
116. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, and S. Jit, “Quantitative Performance Investigations of Back Gated Strained-Si-on-Insulator (SSOI) MOSFETs: Towards Double-Gate (DG) Operation”, in international conference on Nanoelectronics and Nano devices (ICNEND), accepted for @SNEM conference proceeding, Chennai, Jan. 21-22, 2013.
117. Santunu Sarangi, Gopi Krishna .S, Abirmoya Santra and Pramod Kumar Tiwari, A Simulation-based Study of Gate Misalignment Effects in Triple-Material Double-Gate (TM DG) MOSFETs, Accepted for oral presentation in International Multi Conference on Automation, Computing, Control, Communication and Compressed Sensing, Kerala, March 22-23, 2013.
118. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S.Jit, A 2D Analytical Modeling Approach for Nanoscale Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs by Evanescent Mode Analysis, accepted for poster presentation in CODIS-2012, Jadvpur University, Kolkata.
119. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, An Analytical Modeling of Interface Charge Induced Effects on Subthreshold Current and Subthreshold Swing of strained-Si (s-Si) on Silicon-Germinium-on-Insulator (SGOI) MOSFETs, accepted for oral presentaion in CODEC-12, CU, Kolkata
120. Mirgender Kumar, Sarvesh Dubey, Abirmoya Santra, Pramod Kumar Tiwari and S. Jit, An Analytical Study of Short-Channel Effects of Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs Including Interface Charges, ICQNM-2012, Roma, Italy, Aug 19-24,2012.
121. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, Extremely Scaled EOT Bi-Layered stacked High-k (BSK) Double-Material Double-Gate (DM DG) Strained-Si (S-Si) Channel MOSFET for High Performance Band-Edge (BE) CMOS Technology, RANET-2011, IIITM Gwalior.
122. Abirmoya Santra, Sarvesh Dubey, Mirgender Kumar, Pramod Kumar Tiwari and S. Jit, An Analytical Study of Effect of Interface Charges on the Surface Potential of Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs, Emerging trend in Electrical and Electronics Engineering,ETEEE-2011, KNIT Sultanpur, U.P. India, pp-56-57
123. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, ATLASTM Based Simulation Study of Surface Potential of Double-Material-Gate Strained-Si on Silicon-Germanium-on-Insulator (DMG-SGOI) MOSFETs, Accepted for publication in the proceedings of International Conference on Multimedia Signal Processing and communication technologies 2011( IMPACT 2011), Aligarh Muslim University, India.
124. Harshit Agnihotri, Abhishek Ranjan, Pramod Kumar Tiwari and S.Jit, An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs, IEEE Computer Society Annual Symposium on VLSI (ISVLSI-2011), 327-328.
125. Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit, “A Drain Current Model for Short-Channel Doped Double-Gate (DG) MOSFETs with Vertical Gaussian-like Doping Profile”, Accepted in 5th International Conference on Quantum, Nano and Micro Technologies (ICQNM-11), August, France, 2011.
126. Pramod Kumar Tiwari, Sarvesh Dubey and S.Jit, Doping dependent threshold voltage model for short-channel double-gate(DG) MOSFETs, in International symposium on semiconductor materials and devices -2011, held at M. S. University, Vadodara, India.
127. Sarvesh Dubey, Dhiraj Gupta, Pramod Kumar Tiwari, and S.Jit, 2D analytical modeling of threshold voltage of doped short-channel triple-material double-gate(TM-DG) MOSFETs , International symposium on semiconductor materials and devices -2011, held at M. S. University, Vadodara, India.
128. Pramod Kumar Tiwari, Sarvesh Dubey, Manjeet Singh and S. Jit, An Analytical Subthreshold Current Model for Triple Material Double Gate (TMDG) MOSFETs ,in Proc. International Conference on Electronics System- 2011(ISBN: 978-93-80697-50-5), NIT Rourkela, pp.142-145, 2011.
129. Pramod Kumar Tiwari, Sarvesh Dubey and S.Jit, “ A short-channel subthreshold swing model for asymmetric 3-T DG MOSFETs” in proc. International conference on solid-state and integrated circuit technology (ICSICT-2010), Shanghai, ROC, pp. 1796-1798.
130. Pramod Kumar Tiwari, Sarvesh Dubey and S.Jit, Subthreshold current model for gaussian doped dG MOSFET, In the proceeding of the Latest Trends on Circuits System and Signal, Greece,2010, pp. 27-34
131. Pramod Kumar Tiwari, C. R. Panda, A. Agarwal, P. Sharma and S. Jit, "Analytical Modeling of Effective Conduction Path Effect (ECPE) on the Subthreshold Swing of DG-MOSFETs," published in the procd. of Spanish Conference on Electron Devices (CDE),pp. 136-139,2009,available on line at www.ieee.org.
132. Pramod Kumar Tiwari, Samarth Mittal, Vaibhav Srivastava, Utkarsh Pandey and S. Jit, "A 2D Analytical Model of the Channel Potential and Threshold Voltage of Double-Gate (DG) MOSFETs With Vertical Gaussian Doping Profile," published in the procd of IMPACT-2009, Aligarh, pp.52-55. 2009,
133. S.Dubey, Pramod Kumar Tiwari and S.Jit," Surface potential model for Gaussian doped DG MOSFET" in proc. IWPSD-2009, J.M.I. New Delhi
134. S. Maheshwari, Pramod Kumar Tiwari and I. A. Khan, "Fully differential first order all-pass filter circuit," presented at National Conference: MTECS-08, AMU ,2008.

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